SiHFP27N60K Datasheet | Vishay

FEATURES 600 0.18 - Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Enhanced Body Diode d V/dt Capability - Lead (Pb)-free Available .. TO-247 APPLICATIONS - Hard Switching Primary or PFC Switch - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply S N-Channel MOSFET - High Speed Power Switching - Motor Drive ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-247 IRFP27N60KPb F Si HFP27N60K-E3 IRFP27N60K Si HFP27N60K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 600 ± 30 27 18 110 4.0 EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s 6-32 or M3 screw 530 27 50 500 13 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.4 m H, RG = 25 Ω, IAS = 27 A, d V/dt = 13 V/ns (see fig. 12). c. ISD ≤ 27 A, d I/dt ≤ 390 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91219 S-Pending-Rev. B, 12-Jun-08 .vishay. 1 WORK-IN-PROGRESS IRFP27N60K, Si HFP27N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth CS Rth JC TYP. 0.24 MAX. 40 0.29 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static .....