SiHFP27N60K Description
IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 56 86 Single.
SiHFP27N60K Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness
- Improved Gate, Avalanche and Dynamic dV/dt RoHS
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Enhanced Body Diode dV/dt Capability
- Lead (Pb)-free Available