SiHFU120 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRFR120, Si HFR120) - Straight lead (IRFU120, Si HFU120) - Available in tape and reel - Fast switching Available - Ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE Lead (Pb)-free and halogen-free DPAK (TO-252) Si HFR120-GE3 IRFR120Pb F-BE3 b DPAK (TO-252) Si HFR120TR-GE3 a IRFR120TRPb F-BE3 ab Lead (Pb)-free IRFR120Pb F IRFR120TRPb F a Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location DPAK (TO-252) Si HFR120TRR-GE3 a IRFR120TRRPb F-BE3 ab IRFR120TRRPb F a DPAK (TO-252) Si HFR120TRL-GE3 a IRFR120TRLPb F-BE3 ab IRFR120TRLPb F a IPAK (TO-251) Si HFU120-GE3 IRFU120Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche Current a Repetitive avalanche Energy a Maximum power dissipation Maximum power dissipation (PCB mount)e Peak diode recovery d V/dt c VGS at 10 V TC = 25 °C TC = 100...