Datasheet4U Logo Datasheet4U.com

SiHFU120 - Power MOSFET

Download the SiHFU120 datasheet PDF (SiHFR120 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Surface-mount (IRFR120, SiHFR120).
  • Straight lead (IRFU120, SiHFU120).
  • Available in tape and reel.
  • Fast switching Available.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR120_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G S G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single 0.27 FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR120, SiHFR120) • Straight lead (IRFU120, SiHFU120) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Published: |