SiHFU430A Datasheet | Vishay

FEATURES - Low gate charge Qg results in simple drive requirement - Improved gate, avalanche, and dynamic d V/dt ruggedness - Fully characterized capacitance and avalanche voltage and current Available - Effective Coss specified - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Switch mode power supply (SMPS) - Uninterruptible power supply - High speed power switching ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HFR430A-GE3 Lead (Pb)-free IRFR430APb F Note a. See device orientation DPAK (TO-252) Si HFR430ATR-GE3 a IRFR430ATRPb Fa DPAK (TO-252) Si HFR430ATRL-GE3 a IRFR430ATRLPb Fa DPAK (TO-252) Si HFR430ATRR-GE3 a - IPAK (TO-251) Si HFU430A-GE3 IRFU430APb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d For 10...