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TP0202K
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
−30
rDS(on) (W)
1.4 @ VGS = −10 V 3.5 @ VGS = −4.5 V
VGS(th) (V)
−1.3 to −3.0 −1.3 to −3.0
ID (mA)
−385 −240
Qg (Typ)
1000
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 Ω (typ) Low Threshold: −2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 pF (typ) Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.