TP0202K Datasheet | Vishay

FEATURES D D D D D D High-Side Switching Low On-Resistance: 1.2 Ω (typ) Low Threshold: - 2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 p F (typ) Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid State Relays TO-236 (SOT-23) G 1 Ordering Information: TP0202K-T1 TP0202K-T1- E3 (Lead (Pb)-Free) 3 S 2 Top View D Marking Code: 2Kwll 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulse Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 S-41777- Rev. D, 04-Oct-04 .vishay. TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM Limit - 30 "20 - 385 - 280 - 750 350 185 350 - 55 to 150 Unit V m A m W _C/W _C Rth JA TJ, Tstg Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate Body Leakage Gate-Body V(BR)DSS VGS(th) IGSS IDSS ID(on) r DS(on) DS( ) gfs VSD VGS = 0 V, ID = - 100 m A VDS = VGS, ID = - 250 m A VDS = 0 V, VGS = "5 V VDS = 0 V, VGS = "10 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 85_C VDS = - 10 V, VGS = - 10 V VGS = - 4.5 V, ID = - 50 m A VGS = - 10 V, ID = - 500 m A VDS = - 5 V, ID = - 200 m A IS...