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TSAL6200 - High Power Infrared Emitting Diode

Description

TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 940 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 17°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?.

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Datasheet preview – TSAL6200

Datasheet Details

Part number TSAL6200
Manufacturer Vishay Siliconix
File Size 101.74 KB
Description High Power Infrared Emitting Diode
Datasheet download datasheet TSAL6200 Datasheet
Additional preview pages of the TSAL6200 datasheet.

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Full PDF Text Transcription

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www.vishay.com TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 17° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: For definitions of compliance please see www.vishay.
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