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TSDF1920W - 25 GHz Silicon NPN Planar RF Transistor

Key Features

  • D Very low noise figure D Very high power gain D High transition frequency fT = 24 GHz D Low feedback capacitance D Emitter pins are thermal leads 1 2 4 3 TSDF1920W Marking: YH3 Plastic case (SOT 343R) 1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector 16712 Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Ju.

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Datasheet Details

Part number TSDF1920W
Manufacturer Vishay
File Size 55.22 KB
Description 25 GHz Silicon NPN Planar RF Transistor
Datasheet download datasheet TSDF1920W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSDF1920W Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For RF front–ends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors.