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V50100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Features

  • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum Typical.

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Datasheet Details

Part number V50100P
Manufacturer Vishay Siliconix
File Size 391.85 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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    www.DataSheet4U.com V50100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A TO-247AD (TO-3P) Major Ratings and Characteristics IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 25 A 100 V 250 A 0.
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