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V50100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay Siliconix

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V50100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay Siliconix - Datasheet Preview — Datasheet preview – V50100P

Datasheet Details

Part number	V50100P
Manufacturer	Vishay Siliconix
File Size	391.85 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V50100P Datasheet
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Product details

Description

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Features

Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum Typical.

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Published: Apr 4, 2008 |