V50100P
V50100P is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
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New Product Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.372 V at IF = 5 A
TO-247AD (TO-3P)
Major Ratings and Characteristics
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 25 A 100 V 250 A 0.64 V 150 °C
PIN 1 PIN 3 PIN 2 CASE
3 2 1
Features
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- Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds
Mechanical Data
Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for mercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum
Typical Applications
For use in high frequency inverters, switching power supplies, freewheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection.
Maximum Ratings
(TA = 25 °C unless otherwise specified) Parameter Maximum repetitive peak reverse voltage RMS reverse voltage for sine wave DC blocking voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse current per leg at tp = 2 µs, 1 k Hz Operating junction and storage temperature range per device per leg per leg IFSM IRRM TJ, TSTG 250 1.0
- 20 to + 150 A A °C Symbol VRRM VRMS VR IF(AV) V50100P 100 70 100 50 25 Unit V V V A
Document Number 88929 01-Dec-05
.vishay. 1
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Vishay General Semiconductor Electrical Characteristics
(TA = 25 °C unless otherwise specified) Parameter Breakdown voltage Instantaneous forward voltage per leg
(1)
Test condition at IR = 1.0 m A at IF = 5 A IF = 10 A IF = 20 A IF = 25 A IF = 5 A IF = 10 A IF = 20 A IF = 25 A TJ = 125 °C TJ = 25 °C TJ = 25 °C
Symbol V(BR)
Typ. 100 (minimum) 0.463 0.535 0.664 0.700 0.375 0.445 0.605 0.635
Max. 0.78 0.70 500 15 1000...
