Datasheet4U Logo Datasheet4U.com

VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 VFT1045C PIN 1 PIN 3 PIN 2 2 3.

📥 Download Datasheet

Datasheet preview – VFT1045C

Datasheet Details

Part number VFT1045C
Manufacturer Vishay Siliconix
File Size 97.80 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT1045C Datasheet
Additional preview pages of the VFT1045C datasheet.
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
New Product VFT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1045C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.
Published: |