VI30120S - High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay Siliconix

Part number	VI30120S
Manufacturer	Vishay Siliconix
File Size	134.44 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI30120S Datasheet
Additional preview pages of the VI30120S datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VI30120S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30120SG - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30100S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI30100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by Vishay Siliconix

Published: Jan 30, 2007 |