VQ1004J Datasheet | Vishay

FEATURES D D D D D Low On-Resistance: 1.3 W Low Threshold: 1.7 V Low Input Capacitance: 35 p F Fast Switching Speed: 8 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line TO-205AD (TO-39) N S 1 2N6660 “S” fllxxyy 2 G 3 D “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code N Device Marking Side View D1 S1 G1 NC G2 S2 D2 D4 S4 G4 NC G3 S3 D3 N N Device Marking Top View VQ1004J “S” fllxxyy 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VQ1004P “S” fllxxyy “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View 2N6660 Top View Plastic: VQ1004J Sidebraze: VQ1004P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambientb TC= 25_C TC= 100_C TC= 25_C TC= 100_C Total Quad VQ1004J/P Unit Symbol VDS VGS ID IDM PD Rth JA Rth JC TJ, Tstg 2N6660 60 "20 1.1 0.8 3 6.25 2.5 170 20 60 "30 0.46 0.26 2 1.3 0.52 0.96 VQ1004P 60 "20 "0.46 0.26 2 1.3 0.52 0.96 A 2 0.8 62.5 W _C/W _C Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Document Number: 70222 S-04379- Rev. E, 16-Jul-01 - 55 to 150 .vishay. 11-1 2N6660, VQ1004J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N6660 VQ1004J/P Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol Test...