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VQ3001P - Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Features

  • D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/.
  • 3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage.

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Datasheet Details

Part number VQ3001P
Manufacturer Vishay Siliconix
File Size 50.44 KB
Description Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
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VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) N-Channel P-Channel 30 –30 rDS(on) Max (W) 1 @ VGS = 12 V 2 @ VGS = –12 V VGS(th) (V) 0.8 to 2.5 –2 to –4.5 ID (A) 0.85 –0.6 FEATURES D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
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