VSLB3940
Description
VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.
Key Features
- Package type: leaded
- Package form: T-1, clear epoxy
- Dimensions: Ø 3 mm
- Peak wavelength: λp = 940 nm
- High radiant power
- High radiant intensity 94 8636
- Angle of half intensity: ϕ = ± 22°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching to Si photodetectors
