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VSLB3940 - High Speed Infrared Emitting Diode

Description

VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.

Lead (Pb)-free component Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control units PRODUCT

Features

  • Package type: leaded.
  • Package form: T-1, clear epoxy.
  • Dimensions: Ø 3 mm.
  • Peak wavelength: λp = 940 nm.
  • High speed.
  • High radiant power.
  • High radiant intensity 94 8636.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching to Si photodetectors.

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Datasheet preview – VSLB3940

Datasheet Details

Part number VSLB3940
Manufacturer Vishay Siliconix
File Size 105.89 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLB3940 Datasheet
Additional preview pages of the VSLB3940 datasheet.

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    Full PDF Text Transcription

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    VSLB3940 Vishay Semiconductors www.DataSheet4U.com High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching to Si photodetectors DESCRIPTION VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.
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