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VSMF3710 - High Speed Infrared Emitting Diode

Datasheet Summary

Description

VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).

Features

  • Package type: surface-mount.
  • Package form: PLCC-2.
  • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 60°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation band width: fc = 12 MHz.
  • Good spectral matching with Si photodetectors.
  • Flo.

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Datasheet Details

Part number VSMF3710
Manufacturer Vishay Siliconix
File Size 137.71 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSMF3710 Datasheet
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Full PDF Text Transcription

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End of Life July-2021 - Alternative Device: VSMY3890X01 www.vishay.com VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 948553 DESCRIPTION VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). FEATURES • Package type: surface-mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.
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