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1N4760A - Silicon Power Z-Diodes

Key Features

  • D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ.
  • tolerance ± 5%.

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Datasheet Details

Part number 1N4760A
Manufacturer Vishay
File Size 40.79 KB
Description Silicon Power Z-Diodes
Datasheet download datasheet 1N4760A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N4728A...1N4761A Vishay Telefunken Silicon Power Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions Tamb 50°C x Type Symbol PV IZ Tj Tstg Value 1 PV/VZ 200 –65...+200 Unit W mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 100 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.2 Unit V Document Number 85587 Rev. 2, 01-Apr-99 www.vishay.