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1N959B - Silicon Z-Diodes

Key Features

  • D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ.
  • tolerance ± 5%.

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Datasheet Details

Part number 1N959B
Manufacturer Vishay
File Size 33.71 KB
Description Silicon Z-Diodes
Datasheet download datasheet 1N959B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N957B...1N963B Vishay Telefunken Silicon Z–Diodes Features D D D D Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions TL 75°C x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 200 –65...+200 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=9.5mm (3/8”), TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.1 Unit V Rev. A3, 13-Nov-98 1 (3) 1N957B...