• Part: BA779S
  • Description: Silicon PIN Diodes
  • Category: Diode
  • Manufacturer: Vishay
  • Size: 54.01 KB
Download BA779S Datasheet PDF
Vishay
BA779S
Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 - 55...+125 Unit V m A °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol Rth JA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test Conditions IF=20m A VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5m A f=100MHz, VR=0 IF=10m A, IR=10m A Type Symbol VF IR CD rf zr zr Min Typ Max 1 50 0.5 50 Unit V n A p F BA779 BA779S t 5 9 4 k W k W ms Document Number 85532 Rev. 3, 01-Apr-99 .vishay.de - Fax Back +1-408-970-5600 1 (4) BA779.BA779S Vishay Telefunken Characteristics (Tj = 25_C...