BB814 - Silicon Epitaxial Planar Dual Capacitance Diode

Vishay

Key Features

D Common cathode.

BB814 silicon epitaxial planar dual capacitance diode by Vishay - Datasheet Preview

Datasheet Details

Part number	BB814
Manufacturer	Vishay
File Size	46.11 KB
Description	Silicon Epitaxial Planar Dual Capacitance Diode
Datasheet	BB814 Datasheet

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BB814 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 1 Group 2 Group 1 Group 2 VR=2V,8V, f=1MHz CD=38pF, f=100MHz Symbol Min IR IR CD 43 CD 44.5 CD 19.1 CD 19.75 CD2/ CD8 2.