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BB824 - Silicon Epitaxial Planar Dual Capacitance Diode

Key Features

  • D Common cathode D High capacitance ratio.

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Datasheet Details

Part number BB824
Manufacturer Vishay
File Size 46.20 KB
Description Silicon Epitaxial Planar Dual Capacitance Diode
Datasheet download datasheet BB824 Datasheet

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BB824 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 2 Group 3 Group 2 Group 3 VR=2V,8V, f=1MHz VR=2V, f=100MHz Symbol IR IR CD CD CD CD CD2/ CD8 rs Min Typ 42.5 43.7 17.5 18.