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BF979 - Silicon PNP Planar RF Transistor

Key Features

  • D High cross modulation performance D High power gain 3 D Low noise D High reverse attenuation 2 94 9308 13623 1 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol.
  • VCBO.
  • VCEO.
  • VEBO.

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Datasheet Details

Part number BF979
Manufacturer Vishay
File Size 51.95 KB
Description Silicon PNP Planar RF Transistor
Datasheet download datasheet BF979 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation.