Datasheet4U Logo Datasheet4U.com

BF979 Datasheet Silicon PNP Planar Rf Transistor

Manufacturer: Vishay

Overview: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation.

Key Features

  • D High cross modulation performance D High power gain 3 D Low noise D High reverse attenuation 2 94 9308 13623 1 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol.
  • VCBO.
  • VCEO.
  • VEBO.

BF979S from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Siemens Semiconductor Group Logo BF979S PNP SILICON PLANAR TRANSISTOR Siemens Semiconductor Group

More Datasheets from Vishay

Part Number Description
BF970 Silicon PNP Planar RF Transistor
BF960 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF964 N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF964S N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF994S N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF995 N-Channel Dual Gate MOS-Fieldeffect Tetrode
BF996S N.Channel Dual Gate MOS-Fieldeffect Tetrode

BF979 Distributor