Datasheet4U Logo Datasheet4U.com

BPW17N - Silicon NPN Phototransistor

General Description

BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens.

It is sensitive to visible and near infrared radiation.

On PCB this package size enables assembly of arrays with 2.54 mm pitch.

Key Features

  • Package type: leaded.
  • Package form: T-¾.
  • Dimensions (in mm): Ø 1.8.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 12°.
  • Comliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC Note.
  • Please see document “Vishay Material Category Policy”: www. vishay. com/doc?99902 in.

📥 Download Datasheet

Datasheet Details

Part number BPW17N
Manufacturer Vishay
File Size 92.50 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW17N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com BPW17N Vishay Semiconductors Silicon NPN Phototransistor 94 8638-1 DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 12° • Comliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.