BPW17N Description
BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.
BPW17N Key Features
- Package type: leaded
- Package form: T-¾
- Dimensions (in mm): Ø 1.8
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ϕ = ± 12°
- liant to RoHS Directive 2002/95/EC and
- Please see document “Vishay Material Category Policy”
BPW17N Applications
- Detector in electronic control and drive circuits