BZX85B
BZX85B is Silicon Epitaxial Planar Z-Diodes manufactured by Vishay.
atures
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175
- 65...+175 Unit W °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol Rth JA Value 110 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200m A Type Symbol VF Min Typ Max 1 Unit V
Document Number 85607 Rev. 3, 01-Apr-99
.vishay.de
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BZX85B...
Vishay Telefunken
Type BZX85B... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 VZnom 1) V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 IZT m A 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 VZT and rzj T V W 2.64 to 2.76 < 20 2.94 to 3.06 < 20 3.24 to 3.36 < 20 3.52 to 3.68 < 20 3.82 to 3.98 < 15 4.22 to 4.38 < 13 4.60 to 4.80 < 13 5.00 to 5.20 < 10 5.48 to 5.72 <7 6.08 to 6.32 <4 6.66 to 6.94 < 3.5 7.35 to 7.65 <3 8.04 to 8.36 <5 8.92 to 9.28 <5 9.80 to 10.20 <7 10.78 to 11.22 <8 11.76 to 12.24 <9 12.74 to 13.26 < 10 14.70 to 15.30 < 15 15.70 to 16.30 < 15 17.64 to 18.36 < 20 19.60 to 20.40 < 24 21.55 to 22.45 < 25 23.5 to 24.5 < 25 26.4 to 27.6 < 30 29.4 to 30.6 < 30 32.4 to 33.6 < 35 35.3 to 36.7 < 40 38.2 to 39.8 < 50 for rzjk at IZK m A 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 IR at VR V < 150 1 < 100 1 < 40 1 < 20 1 < 10 1 <3 1 <3 1 <1 1.5 <1 2 <1 3 <1 4 <1 4.5 <1 6.2 <1 6.8 < 0.5 7.5 < 0.5 8.2 < 0.5 9.1 < 0.5 10 < 0.5 11 < 0.5 12 < 0.5 13 < 0.5 15 < 0.5 16 < 0.5 18 < 0.5 20 < 0.5 22 < 0.5 24 < 0.5 27 < 0.5 30 TKVZ %/K
- 0.08 to
- 0.05
- 0.08 to
- 0.05
- 0.08 to
- 0.05
- 0.08 to...