BZX85B3V3 - Silicon Epitaxial Planar Z-Diodes

Features

D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability.

Vishay Telefunken

Datasheet Details

Part number	BZX85B3V3
Manufacturer	Vishay Telefunken
File Size	56.68 KB
Description	Silicon Epitaxial Planar Z-Diodes
Datasheet	BZX85B3V3 Datasheet
Additional preview pages of the BZX85B3V3 datasheet.

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Full PDF Text Transcription

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BZX85B... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V Document Number 85607 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BZX85B...

Published: Mar 23, 2005 |