BZX85C24 - Silicon Epitaxial Planar Z-Diodes

Vishay

Key Features

D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances.

BZX85C24 silicon epitaxial planar z-diodes by Vishay - Datasheet Preview

Datasheet Details

Part number	BZX85C24
Manufacturer	Vishay
File Size	58.84 KB
Description	Silicon Epitaxial Planar Z-Diodes
Datasheet	BZX85C24 Datasheet

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BZX85C... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stability Available with tighter tolerances Applications 94 9369 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V Document Number 85608 Rev. 3, 01-Apr-99 www.vishay.