CQX48 Datasheet | Vishay

Description CQX48 is a standard Ga As infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case patible to the BPW78 phototransistor, allowing the user to assemble his own optical interrupters. Features D Side view case with spherical lens D Radiation direction perpendicular to mounting direction 94 8743 Angle of half intensity ϕ = ± 25° Peak wavelength lp = 950 nm High reliability Case patible with BPW78 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd Rth JA Value 6 100 2 170 100 - 40...+100 - 40...+100 260 450 Unit V m A A m W °C °C °C °C K/W tp x 100 ms t x5s Document Number 81000 Rev. 5, 16-Nov-99 .vishay.de - Fax Back +1-408-970-5600 1 (5) Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 100 m A, tp 20 ms IR = 100 m A VR = 0 V, f = 1 MHz, E = 0 IF = 50 m A, tp 20 ms IF = 50 m A x x Symbol VF V(BR) Cj TKfe ϕ Min 6 Typ 1.3 50 10 - 0.8 ±25 950 50 400 450 Max 1.7 fe IF = 50 m A IF = 50 m A IF = 1 A, tp/T = 0.01, tp 10 ms IF = 1 A, tp/T = 0.01, tp 10 ms lp Dl tr tf x x Unit V V p F m W %/K deg nm nm ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Radiant Intensity Test Conditions IF=50 m A, tp 20ms x Type CQX 48 B Symbol Ie Min 2 Typ Max Unit m W/sr Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV - Power Dissipation ( m W ) 200 IF - Forward Current ( m A ) 125 100 150 Rth JA 100 75 Rth...