K817P3 Description
In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package. EN 60065:2002, EN 60950-1:2006 DIN EN 60747-5-2 (VDE 0884) FIMKO UL file no. E52744 cUL tested to CSA 22.2 bulletin.
K817P3 Key Features
- Endstackable to 2.54 mm (0.1") spacing
- DC isolation test voltage 5000 VRMS
- Current transfer ratio (CTR) selected into
- Low temperature coefficient of CTR
- Wide ambient temperature range
- Available in single, dual and quad channel packages
- Material categorization: For definitions of pliance