S525T
Features
D Integrated gate protection diodes D Low feedback capacitance D Low noise figure
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S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain
- source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150
- 55 to +150 Unit V m A m A m W °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth Ch A Value 450 Unit K/W
Document Number 85045 Rev. 3, 20-Jan-99
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Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain
- source breakdown voltage Gate
- source breakdown voltage...
