D Integrated gate protection diodes D Low feedback capacitance D Low noise figure
1
G
13 581 94 9280
D
2
3
12624
S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150.
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S525T
Vishay Telefunken
N–Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
S525T Datasheet
