TCDT1110G Overview
The TCDT1110(G) consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II...
TCDT1110G Applications
- IV at mains voltage ≤ 300 V D For appl. class I