TCET4600
Overview
The TCET2600, TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package.
- Extra low coupling capacity - typical 0.2 pF
- High common mode rejection
- Low temperature coefficient of CTR
- Rated impulse voltage (transient overvoltage) VIOTM = 10 kV peak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
- Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
- Thickness though insulation ≥ 0.4 mm
- Creepage current resistance according to VDE 0303/
