TCET4600 Description
The TCET2600, TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package.
TCET4600 Key Features
- Extra low coupling capacity
- typical 0.2 pF
- High mon mode rejection
- Low temperature coefficient of CTR
- Rated impulse voltage (transient overvoltage)
- Isolation test voltage (partial discharge test
- Rated isolation voltage (RMS includes DC)
- Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak
- Thickness though insulation ≥ 0.4 mm
- Creepage current resistance according to VDE 0303/