TSHA5501
Description
The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390.
Key Features
- D Extra high radiant power Suitable for high pulse current operation Standard T-1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 24° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors
