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TSHA6201 - Infrared Emitting Diode

General Description

The TSHA620.

series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 875 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 12°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note.
  • Please see document “Vishay Material Category Policy”:.

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Datasheet Details

Part number TSHA6201
Manufacturer Vishay
File Size 102.87 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSHA6201 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.