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TSUS4300 - Infrared Emitting Diode

General Description

TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package.

Key Features

  • Package type: leaded.
  • Package form: T-1.
  • Dimensions (in mm): Ø 3.
  • Peak wavelength: λp = 950 nm.
  • High reliability.
  • Angle of half intensity: ϕ = ± 16°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Package matches with detector TEFT4300.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number TSUS4300
Manufacturer Vishay
File Size 106.51 KB
Description Infrared Emitting Diode
Datasheet download datasheet TSUS4300 Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 94 8636-1 DESCRIPTION TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 • Material categorization: for definitions of compliance please see www.vishay.