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TZMB6V2 - Silicon Epitaxial Planar Z-Diodes

Download the TZMB6V2 datasheet PDF. This datasheet also covers the TZM variant, as both devices belong to the same silicon epitaxial planar z-diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ.
  • tolerance ± 2% 94 9371.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TZM-B.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TZMB6V2
Manufacturer Vishay
File Size 76.46 KB
Description Silicon Epitaxial Planar Z-Diodes
Datasheet download datasheet TZMB6V2 Datasheet

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Other Datasheets by Vishay

Part Number Description
TZMB6V8 Silicon Epitaxial Planar Z-Diodes
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TZMB68 Silicon Epitaxial Planar Z-Diodes
TZMB Silicon Epitaxial Planar Z-Diodes
TZMB10 Silicon Epitaxial Planar Z-Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TZMB... Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ–tolerance ± 2% 94 9371 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85610 Rev.
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