Vishay 10UT10
High Performance Schottky Generation
| Part No. | 10UT10 |
|---|---|
| Datasheet | 10UT10 Download |
| Manufacturer |  Vishay |
| Description | High Performance Schottky Generation |
| Buy | Stock & Price |
FEATURES
● 175 °C high performance Schottky diode● Very low forward voltage drop
● Extremely low reverse leakage
● Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4
● Increased ruggedness for reverse avalanche capability
● RBSOA available
● Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode
● Submicron trench technology
● Compliant to RoHS directive 2002/95/EC
● AEC-Q101 qualified I-PAK (TO-251AA) D-PAK (TO-252AA)
APPLICATIONS
● High efficiency SMPS● Automotive PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 10 A at 125 °C 10 A 100 V 0.66 V
● High frequency switching
● Output rectification
● Reverse battery protection
● Freewheeling
● Dc-to-dc systems
● Increased power density systems SYMBOL VRRM VF TJ MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS 10 Apk, TJ = 125 °C (typical) Range VALUES 100 0.615 - 55 to 175 UNITS V V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C 10UT10 10WT10FN...
