Datasheet4U Logo Datasheet4U.com

10WT10FN - High Performance Schottky Generation

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage.
  • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode.
  • Submicron trench technology.
  • Compliant to RoHS directive 2002/95/EC.

📥 Download Datasheet

Datasheet Details

Part number 10WT10FN
Manufacturer Vishay
File Size 136.01 KB
Description High Performance Schottky Generation
Datasheet download datasheet 10WT10FN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Vishay

Part Number Description

Full PDF Text Transcription

Click to expand full text
10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 10UT10 10WT10FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4 • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Submicron trench technology • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • High efficiency SMPS • Automotive PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 10 A at 125 °C 10 A 100 V 0.
Published: |