Datasheet Summary
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
560 V VGS = 10 V
48 12 15 Single
TO-220AB
TO-220 FULLPAK
0.555 D
Features
- Low Figure-of-Merit Ron x Qg
- 100 % Avalanche Tested
- Gate Charge Improved
- Trr/Qrr Improved
- pliant to RoHS Directive 2002/95/EC
S D G D2PAK (TO-263)
GD S
S N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP12N50C-E3
D2PAK (TO-263) SiHB12N50C-E3
TO-220 FULLPAK...
