Vishay 16N50C
The information shown here is a preliminary product proposal, not a commercial product data sheet. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.| Part No. | 16N50C |
|---|---|
| Datasheet | 16N50C Download |
| Manufacturer |  Vishay |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low Figure-of-Merit Ron x Qg● 100 % Avalanche Tested
● Gate Charge Improved
● Trr/Qrr Improved
● Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB SiHP16N50C-E3 Lead (Pb)-free - - D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation TO220-AB, D2PAK (TO-263) TO-220 FULLPAK EAS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 16 A. c.
