20CWT10FN
Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage Base common cathode 4 Base common cathode 4
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche capability
- RBSOA available
- Negligible switching losses 3 1 Anode 2 Anode Common cathode 2 Common 3 1 Anode cathode Anode
- Submicron trench technology
- Fully lead (Pb)-free and RoHS compliant devices
- Qualified for AEC Q101
