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20CWT10FN - High Performance Schottky Generation

This page provides the datasheet information for the 20CWT10FN, a member of the 20CUT10 High Performance Schottky Generation family.

Datasheet Summary

Features

  • 175 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Extremely low reverse leakage Base common cathode 4 Base common cathode 4.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • RBSOA available.
  • Negligible switching losses 3 1 Anode 2 Anode Common cathode 2 Common 3 1 Anode cathode Anode.
  • Submicron trench technology.
  • Fully lead (Pb)-fre.

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Datasheet preview – 20CWT10FN

Datasheet Details

Part number 20CWT10FN
Manufacturer Vishay
File Size 134.54 KB
Description High Performance Schottky Generation
Datasheet download datasheet 20CWT10FN Datasheet
Additional preview pages of the 20CWT10FN datasheet.

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Full PDF Text Transcription

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20CUT10, 20CWT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 2 x 10 A 20CUT10 20CWT10FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage Base common cathode 4 Base common cathode 4 • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Common cathode 2 Common 3 1 Anode cathode Anode • Submicron trench technology • Fully lead (Pb)-free and RoHS compliant devices • Qualified for AEC Q101 I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • High efficiency SMPS • Automotive PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 10 A at 125 °C 2 x 10 A 100 V 0.
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