20WT04FN - High Performance Schottky Generation

Datasheet Summary

Features

175 °C high performance Schottky diode.
Very low forward voltage drop.
Extremely low reverse leakage.
Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4.
Increased ruggedness for reverse avalanche capability.
RBSOA available.
Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode.
Submicron trench technology.
Full lead (Pb)-free and RoHS compliant devices.

Vishay

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Datasheet Details

Part number	20WT04FN
Manufacturer	Vishay
File Size	134.54 KB
Description	High Performance Schottky Generation
Datasheet	20WT04FN Datasheet
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20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 20WT04FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency Base cathode 4 Base cathode 4 • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Submicron trench technology • Full lead (Pb)-free and RoHS compliant devices • Qualified for AEC Q101 I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • Specific for PV cells bypass diode • High efficiency SMPS PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 20 A at 125 °C (1) Note (1) Measured connecting 2 anode pins 20 A 45 V 0.

Published: Jan 11, 2010 |