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50N04-07L - SUD50N04-07L

Key Features

  • TrenchFET® Power.

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New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 40 0.0074 at VGS = 10 V 0.0011 at VGS = 4.5 V ID (A)c 65 54 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Threshold Available RoHS* COMPLIANT TO-252 D GDS Top View Drain Connected to Tab Ordering Information: SUD50N04-07L SUD50N04-07L (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.