Vishay 71090
P-Channel 30-V (D-S) MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −30 "20 Unit V −3.5 −2.8 −20 −1.7 2.0 1.3 −55 to 150 −2.7 −2.1 A −0.95 1.14 0.73 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71090 S-40424—Rev. C, 15-Mar-04 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 Unit _C/W 1 Si3455ADV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-...