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AN606 - Current Sensing Power MOSFETs

General Description

Dividing the MOSFET cells in a known ratio creates two paths that share the drain-source current.

Key Features

  • such as overcurrent and/or short circuit. This approach offers the freedom and flexibility of control-circuit design, though the accuracy of measurement is not suitable for current-control.

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Datasheet Details

Part number AN606
Manufacturer Vishay
File Size 94.92 KB
Description Current Sensing Power MOSFETs
Datasheet download datasheet AN606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AN606 Vishay Siliconix Current-Sensing Power MOSFETs Kandarp Pandya INTRODUCTION Vishay Siliconix current-sensing power MOSFETs offer a simple means of incorporating a protection feature into an electronic control circuit and avoiding catastrophic failures resulting from overcurrent (overload) and/or short-circuit conditions. The device package is a modified D2PAK with five pins. The MOSFET termination retains the standard D2PAK footprint for a three-pin device. The additional two pins provide termination for a current-sense output and an internal Kelvin connection to the source. For current sensing, the MOSFET design employs a small number of the total number of MOSFET cells in a known ratio. The latter define the current-sense parameters.