BAS86-M
Overview
- For general purpose applications
- This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
- Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring
- The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications
- AEC-Q101 qualified
- Material categorization: for definitions of compliance please see
