Vishay BF979
Silicon PNP Planar RF Transistor
| Part No. | BF979 |
|---|---|
| Datasheet | BF979 Download |
| Manufacturer |  Vishay |
| Description | Silicon PNP Planar RF Transistor |
| Buy | Stock & Price |
APPLICATIONS
UHF/VHF uncontrolled prestages with low noise and low modulation.FEATURES
D High cross modulation performance D High power gain 3 D Low noise D High reverse attenuation 2 94 9308 13623 1 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = EmitterABSOLUTE MAXIMUM RATINGS
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 20 20 3 50 300 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W Document Number 85006 Rev. 3, 20-Jan-99● FaxBack +1-408-970-5600 1 (5) BF979 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unles...
