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BFR181TW Datasheet PDF

Vishay BFR181TW

Silicon NPN Planar RF Transistor

Part No. BFR181TW
Datasheet BFR181TW Download
Manufacturer
Vishay
Description Silicon NPN Planar RF Transistor
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BFR181TW datasheet page 1 preview

APPLICATIONS

For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

FEATURES

D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR181T Marking: RF Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR181TW Marking: WRF Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter

ABSOLUTE MAXIMUM RATINGS

Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 20 2 160 150 –65 to +150 Unit V V V mA mA mW °C °C Tamb ≤ 78 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85024 Rev. 2, 20-Jan-99
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