Vishay BFR193TW
Silicon NPN Planar RF Transistor
| Part No. | BFR193TW |
|---|---|
| Datasheet | BFR193TW Download |
| Manufacturer |  Vishay |
| Description | Silicon NPN Planar RF Transistor |
| Buy | Stock & Price |
APPLICATIONS
For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.FEATURES
D Low noise figure D High transition frequency fT = 8 GHz D Excellent large-signal behaviour 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR193T Marking: RC Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR193TW Marking: WRC Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = EmitterABSOLUTE MAXIMUM RATINGS
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 45 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient mounted on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 250 Unit K/W Document Number Rev.
