Vishay BFR280T
Silicon NPN Planar RF Transistor
APPLICATIONS
For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.FEATURES
D Low power applications D Low noise figure D High transition frequency 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR280T Marking: RE Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR280TW Marking: WRE Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = EmitterABSOLUTE MAXIMUM RATINGS
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 15 8 2 10 80 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 114 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85027 Rev. 2, 20-Jan-99●...