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BPW76B - Silicon NPN Phototransistor

Download the BPW76B datasheet PDF. This datasheet also covers the BPW76A variant, as both devices belong to the same silicon npn phototransistor family and are provided as variant models within a single manufacturer datasheet.

General Description

BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and flat glass window.

It is sensitive to visible and near infrared radiation.

Key Features

  • Package type: leaded.
  • Package form: TO-18.
  • Dimensions (in mm): Ø 4.7.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 40°.
  • Base terminal connected.
  • Hermetically sealed package.
  • Flat glass window.
  • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BPW76A-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BPW76B
Manufacturer Vishay
File Size 136.79 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW76B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 94 8401 DESCRIPTION BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and flat glass window. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.