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BPW96B - Silicon NPN Phototransistor

General Description

BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package.

It is sensitive to visible and near infrared radiation.

Key Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity: ϕ = ± 20°.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note.
  • Please see document “Vishay Material Category Policy”: www. vishay. com.

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Datasheet Details

Part number BPW96B
Manufacturer Vishay
File Size 109.73 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPW96B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com BPW96B, BPW96C Vishay Semiconductors Silicon NPN Phototransistor 94 8391 DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.