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BZG47 - Silicon Z-Diodes

Features

  • D Passivated junction D High reliability D Voltage range 3.3 V to 100 V D Fits onto 5 mm SMD footpads D Wave and reflow solderable D VZnom ±10% and ±5% tolerance 15 811.

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Datasheet Details

Part number BZG47
Manufacturer Vishay
File Size 103.66 KB
Description Silicon Z-Diodes
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BZG47.. , BZG47..A Vishay Telefunken Silicon Z–Diodes Features D Passivated junction D High reliability D Voltage range 3.3 V to 100 V D Fits onto 5 mm SMD footpads D Wave and reflow solderable D VZnom ±10% and ±5% tolerance 15 811 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_ C Parameter Power dissipation Non repetitive peak surge power dissipation Junction temperature Storage temperature range Test Conditions RthJA<100K/W, Tamb=25° C tp=100m s sq.pulse, Tj=25° C prior to surge www.DataSheet.co.kr Type Symbol PV PZSM Tj Tstg Value 1.25 50 150 –65...+150 Unit W W °C °C Maximum Thermal Resistance Tj = 25_ C Parameter Test Conditions Junction lead Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a mounted on epoxy–glass hard tissue, Fig.
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