Vishay BZX85B4V7
Silicon Epitaxial Planar Z-Diodes
| Part No. | BZX85B4V7 |
|---|---|
| Datasheet | BZX85B4V7 Download |
| Manufacturer |  Vishay |
| Description | Silicon Epitaxial Planar Z-Diodes |
| Buy | Stock & Price |
FEATURES
D D D D Sharp edge in reverse characteristics Low reverse current Low noise Very high stabilityAPPLICATIONS
94 9369 Voltage stabilizationABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.3 175 –65...+175 Unit W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/WELECTRICAL CHARACTERISTICS
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V Document Number 85607 Rev. 3, 01-Apr-99● FaxBack +1-408-970-5600 1 (5) BZX85B... Vishay Telefunken Type BZX85B... 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 VZnom 1) V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15...
